Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation

The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity optoelectronic nanometer-scale devices photonic connections, sensors, and photovoltaics. Utilizing unique lithography approach based on direct femtosecond laser processing, fast easy technique for modification single-walled nanotube (SWCNT) properties through localized two-photon oxidation developed. It results novel quasimetallic semiconducting conversion so that metal/semiconductor junction formed via local patterning. fabricated field-effect transistors individual SWCNT drastically increases photoresponse such devices. broadband photoresponsivity oxidized structures reaches value 2 × 107 A W−1 per single at 1 V bias voltage. SWCNT-based with induced can be applied detect extremely small light intensities high spatial resolution photovoltaics, integrated circuits, telecommunication applications.